Dr Peter Carrington

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings
Wagener, M.C., Carrington, P.J., Botha, J.R., Krier, A. 28/07/2014 In: Journal of Applied Physics. 116, 4, 6 p.
Journal article

Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation
James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A., Krier, A. 04/2014 In: IET Optoelectronics. 8, 2, p. 76-80. 5 p.
Journal article

Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells
Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M.C., Botha, J.R. 03/2014 In: Semiconductor Science and Technology. 29, 3, 5 p.
Journal article

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures
Hodgson, P.D., Young, R.J., Kamarudin, M.A., Carrington, P.J., Krier, A., Zhuang, Q.D., Smakman, E.P., Koenraad, P.M., Hayne, M. 21/08/2013 In: Journal of Applied Physics. 114, 7, 7 p.
Journal article

Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
Mahajumi, A.S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M., Krier, A. 31/07/2013 In: Journal of Physics D: Applied Physics. 46, 30, 6 p.
Journal article

Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings
Carrington, P.J., Young, R.J., Hodgson, P.D., Sanchez, A.M., Hayne, M., Krier, A. 03/2013 In: Crystal Growth and Design. 13, 3, p. 1226-1230. 5 p.
Journal article

Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells
Carrington, P.J., Wagener, M.C., Botha, J.R., Sanchez, A.M., Krier, A. 3/12/2012 In: Applied Physics Letters. 101, 23, 5 p.
Journal article

Development of dilute nitride materials for mid-infrared diode lasers
Krier, A., de la Mare, M., Carrington, P.J., Thompson, M., Zhuang, Q., Patane, A., Kudrawiec, R. 09/2012 In: Semiconductor Science and Technology. 27, 9, 8 p.
Journal article

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
Carrington, P.J., Mahajumi, A.S., Wagener, M.C., Botha, J.R., Zhuang, Q., Krier, A. 15/05/2012 In: Physica B: Condensed Matter. 407, 10, p. 1493-1496. 4 p.
Journal article

Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb
Cheetham, K.J., Carrington, P.J., Krier, A., Patel, I.I., Martin, F.L. 01/2012 In: Semiconductor Science and Technology. 27, 1, p. -. 4 p.
Journal article

Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes
Cheetham, K.J., Carrington, P.J., Cook, N.B., Krier, A. 02/2011 In: Solar Energy Materials and Solar Cells. 95, 2, p. 534-537. 4 p.
Journal article

MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices
de la Mare, M., Krier, A., Zhuang, Q., Carrington, P., Patane, A. 2011 In: Proceedings of SPIE. 7945, 79450L
Journal article

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes
Carrington, P., de la Mare, M., Cheetham, K.J., Zhuang, Q., Krier, A. 2011 In: Advances in OptoElectronics. 2011, n/a, 8 p.
Journal article

Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.
de la Mare, M., Carrington, P.J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A.M., Krier, A., EPSRC Studentship for MDLM (Funder) 1/09/2010 In: Journal of Physics D: Applied Physics. 43, 34, p. 345103.
Journal article

Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.
Carrington, P.J., Zhuang, Q., Yin, M., Krier, A. 07/2009 In: Semiconductor Science and Technology. 24, 7, p. 075001.
Journal article

Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.
Nash, G.R., Przeslak, S.J.B., Smith, S.J., de Valicourt, G., Andreev, A.D., Carrington, P.J., Yin, M., Krier, A., Coomber, S.D., Buckle, L., Emeny, M.T., Ashley, T. 5/03/2009 In: Applied Physics Letters. 94, 9, p. 091111.
Journal article

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
Carrington, P.J., Solov'ev, V.A., Zhuang, Q., Vanov, S.V., Krier, A. 03/2009 In: Microelectronics Journal. 40, 3, p. 469-472. 4 p.
Journal article

Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Nash, G.R., Przeslak, S.J.B., Smith, S.J., de Valicourt, G., Andreev, A.D., Carrington, P.J., Yin, M., Krier, A., Coomber, S.D., Buckle, L., Emeny, M.T., Ashley, T. 2009 In: Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York : IEEE p. 2813-2814. 2 p.
Paper

Growth optimization of self-organized InSb/InAs quantum dots.
Zhuang, Q., Carrington, P.J., Krier, A. 13/11/2008 In: Journal of Physics D: Applied Physics. 41, 23, 4 p.
Journal article

GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.
Yin, M., Nash, G.R., Coomber, S.D., Buckle, L., Carrington, P.J., Krier, A., Andreev, A., Przeslak, S.J.B., de Valicourt, G., Smith, S.J., Emeny, M.T., Ashley, T. 23/09/2008 In: Applied Physics Letters. 93, 12, p. 121106.
Journal article

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.
Carrington, P.J., Solov'ev, V.A., Zhuang, Q., Krier, A., Ivanov, S.V. 1/09/2008 In: Applied Physics Letters. 93, 9, p. 091101.
Journal article

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes
Carrington, P., Solov'ev, V.A., Zhuang, Q., Ivanov, S.V., Krier, A. 1/02/2008 In: Proceedings of SPIE. 6900
Journal article

The development of room temperature LEDs and lasers for the mid-infrared spectral range.
Krier, A., Yin, M., Smirnov, V., Batty, P.J., Carrington, P., Solovev, V., Sherstnev, V. 01/2008 In: physica status solidi (a). 205, 1, p. 129-143. 15 p.
Journal article

Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE
Yin, M., Krier, A., Carrington, P.J., Jones, R., Krier, S.E. 2008 In: NARROW GAP SEMICONDUCTORS 2007. DORDRECHT : Springer p. 69-72. 4 p. ISBN: 978-1-4020-8424-9.
Conference contribution

Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE.
Yin, M., Krier, A., Carrington, P.J., Jones, R., Krier, S.E. 2008 In: Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Bristol : Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol p. 69-72. 4 p. ISBN: 978-1-4020-8424-9.
Chapter

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Solov'ev, V.A., Carrington, P., Zhuang, Q., Lai, K.T., Haywood, S.K., Ivanov, S.V., Krier, A. 2008 In: NARROW GAP SEMICONDUCTORS 2007. DORDRECHT : Springer p. 129-131. 3 p. ISBN: 978-1-4020-8424-9.
Conference contribution

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Solov'ev, V.A., Carrington, P., Zhuang, Q., Lai, K.T., Haywood, S.K., Ivanov, S.V., Krier, A. 2008 In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Bristol : Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol p. 129-131. 3 p. ISBN: 978-1-4020-8424-9.
Chapter

Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .
Nash, G.R., Smith, S.J., Coomber, S.D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M.T., Ashley, T. 24/09/2007 In: Applied Physics Letters. 91, 13, p. 131118.
Journal article

Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .
Yin, M., Krier, A., Jones, R., Carrington, P. 3/09/2007 In: Applied Physics Letters. 91, 10
Journal article

Mid-infrared diode lasers for free space optical communications
Yin, M., Krier, A., Krier, S., Jones, R., Carrington, P. 2006 In: Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING p. U101-U106. 6 p. ISBN: 978-0-8194-6497-2.
Conference contribution